ION IMPLANTATION JUNCTION TECHNIQUES.
Abstract
The program is primarily directed at the fabrication of high power-to-weight ratio cells with integral coverslips. During this quarter investigations were concentrated on conventional silicon material cells. At a nominal thickness of 8 mils (without coverslip), efficiencies as high as 10.3% (AMO) and P/W ratios of 121 watts/lb have been achieved. At 5 mils, the respective numbers are 9.5% and 181 watts/lb. Eight mil cells with 1.5 integral coverslips were made with efficiencies of 12.3% (tungsten - 2800 K) and P/W ratios of 130 watts/lb (tungsten).
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1966
- Accession Number
- AD0805407
Entities
People
- Douglas Smith
- J. T. Burrill
- Q. J. King
- S. Harrison
- S. J. Solomon