MICROWAVE OSCILLATIONS IN BULK SEMICONDUCTORS

Abstract

Experiments designed to further explore the properties of heat treated boat grown n-type GaAs are described. Doping with radioactive Zn has made possible the determination of the deep donor concentration, yielding a value of 4 x 10 to the 16th power cm to the -3rd power. Material for bulk effect devices is also being obtained by solution regrowth and vapor growth. Efforts to batch fabricate Gunn oscillators with reproducible device characteristics have been disappointing, the source of the problem not yet identified. Experiments designed to measure the drift velocity vs. field in GaAs are underway.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1967
Accession Number
AD0806011

Entities

People

  • C. Lanza
  • J. M. Woodall
  • N. Braslau

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accidents
  • Bulk Materials
  • Bulk Semiconductors
  • Commerce
  • Electronics
  • Energy
  • Gunn Effect
  • Heat Energy
  • Heat Of Activation
  • Heat Treatment
  • Materials
  • Measurement
  • New Jersey
  • Oscillation
  • Oscillators
  • Semiconductors
  • Substrates

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene