RECOMBINATIONAL RADIATION IN GASB (GALLIUM ANTIMONIDE) (PROMIENTIOWANIE REKOMBINACYJNE W GASB)

Abstract

The preliminary results of an experimental investigation of photoluminescence and electroluminescence from a p-n junction in gallium antimonide are presented from the standpoint of using this material for semiconductor lasers. The method of obtaining pure gallium antimonide (direct reaction in a graphite boat at 800 C inside a quartz ampule filled with hydrogen under a few cm Hg pressure) is described. Final purification was obtained by zone refining (150 passes during 150 hours). The material was then doped with Zn, Cd, S, or oxygen; n-type material was obtained by doping with selenium and tellurium. The method of producing p-n junctions by alloying is described and photographs of the junctions obtained are shown.

Document Details

Document Type
Technical Report
Publication Date
Dec 05, 1966
Accession Number
AD0807286

Entities

People

  • I. Filinski
  • J. Baranowski
  • W. Wardzynski

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Antimonides
  • Extrinsic Semiconductors
  • Gallium
  • Gallium Antimonides
  • Graphitic Materials
  • Materials
  • P-N Junctions
  • Photographs
  • Radiation
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thermal Physics or Thermal Science.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene