SILICON CARBIDE FROM PYROLYSIS OF NONSTOICHIOMETRIC ORGANOSILANES.

Abstract

Alpha-silicon carbide was prepared by vapor-deposition form nonstoichiometric halogenated organosilanes. As the carbon to silicon ratio in the molecular structure increased, a slight corresponding increase in free graphite was noted in the deposited material. When methoxysilanes were pyrolyzed, a glassy material was formed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1966
Accession Number
AD0807388

Entities

People

  • Duane E. Earley
  • Ralph L. Hough

Organizations

  • Air Force Research Laboratory

Tags

DTIC Thesaurus Topics

  • Advanced Materials
  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Engineered Materials
  • Graphitic Materials
  • Materials
  • Materials Processing
  • Molecular Structure
  • Pyrolysis
  • Silicon
  • Silicon Carbide
  • Vapor Deposition

Fields of Study

  • Chemistry

Readers

  • Thin Film Deposition Science.