RADIATION EFFECTS IN III-V COMPOUNDS.
Abstract
The effects of radiation damage are reviewed for the following III-V compounds: InSb, InAs, GaAs, GaSb, AlSb, and InP. The creation of damage, the kinds of defects created, various recovery processes and methods of analyzing annealing experiments are discussed in general terms. Special considerations, characteristic of compounds as contrasted to elements, are also pointed out. The various materials are compared with respect to threshold energy and the energy levels introduced by irradiation. Changes in optical properties, electrical properties, minority carrier lifetime density, thermal conductivity, annealing properties, etc., are discussed. Radiation damage in devices, including solar cells, light-emitting diodes, and tunnel diodes, is also considered briefly. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1966
- Accession Number
- AD0807753
Entities
People
- Lee W. Aukerman
Organizations
- The Aerospace Corporation