AVALANCHE MODE PHOTODIODES FOR HETERODYNE TECHNIQUES AT 1.06 MICRONS.

Abstract

The report describes the development of techniques leading towards realization of a 1 GHz bandwidth photodiode sensitive to 1.06 microns radiation. The improved diffusion and silicon nitride deposition techniques which yield high-quality passivated planar junctions in germanium are described. Of specific importance for the achievement of passivated junctions is the deposition of a virgin nitride layer after the diffusions are complete. Microplasma breakdowns have limited devices to low avalanche gain. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1967
Accession Number
AD0808872

Entities

People

  • Harry Kroger

Organizations

  • Sperry Corporation

Tags

DTIC Thesaurus Topics

  • Bandwidth
  • Ceramic Materials
  • Diffusion
  • Germanium
  • Photodiodes
  • Radiation

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy