SEMICONDUCTOR LASER MODULATION TECHNIQUES.

Abstract

This report describes continuing work on construction of a piezoelectric modulator/gallium-arsenide laser diode package aimed at frequency modulation of a continuously operating laser. Difficulties encountered with repolarization of PZT transducer material after fabrication have led to (1) consideration of a lower temperature fabrication procedure and (2) investigation of high-Curie-temperature piezoelectric materials such as lithium metaniobate. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1967
Accession Number
AD0809148

Entities

Organizations

  • General Electric

Tags

DTIC Thesaurus Topics

  • Construction
  • Curie Temperature
  • Fabrication
  • Frequency Modulation
  • Gallium Arsenide Lasers
  • Gallium Arsenides
  • Laser Diodes
  • Lasers
  • Materials
  • Modulation
  • Modulators
  • Piezoelectric Materials
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Optical Physics and Photonics.
  • Software Engineering

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Microelectromechanical Systems