ION IMPLANTATION DOPING TECHNIQUES.
Abstract
Research toward gaining a fundamental understanding of ion implantation processes has been emphasized. An ion beam collimation system was designed which will permit studies with a well-collimated and aligned beam to provide data on deep channeling processes. A series of gallium implantations in silicon were made in order to determine a limit of acceptor concentration and the effect of solid solubility on that limit. Source development continued during the quarter with significant improvements in source current resulting from a better source extraction electrode configuration. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1967
- Accession Number
- AD0809194
Entities
People
- O. J. Marsh
- R. G. Wilson
Organizations
- HRL Laboratories