PHOTOMETALLIC PROCESS INVESTIGATION.
Abstract
This is the Final Technical Report of a twelve month program to investigate and develop the Photometallic Process. The broad objective of the program was the fabrication of microelectronic circuits in thin films of gold, nichrome, aluminum and silicon dioxide by a process in which these materials are directly etched by a photosensitive material according to an incident light pattern. A balanced program of basic investigation and application orientation experimentation has resulted in photosensitive polymer films that etch the thin film in a pattern corresponding to the areas exposed to activating radiation. This investigational program has been advanced to the point where 30 to 50 lines per millimeter resolution has been obtained even at this early stage of process development. A preferred etching system for gold in N,N-dibromodimethyldantoin dissolved in an alcohol soluble butyrate polymer with methanol as a system solvent. Nichrome can be etched with the same system but if ferric chloride is used as the photosensitive material, the system etches nichrome selectively and not gold. Silicon dioxide is etched with a system consisting of trityldifluoroamine dissolved in a polystyrene polymer with benzene, toluene and xylene as solvents. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 16, 1967
- Accession Number
- AD0809337
Entities
People
- Donald L. Schaefer
Organizations
- General Electric