GUNN EFFECT DEVICES

Abstract

A third series of devices using commercially available boat-grown material has been fabricated and tested. This series is slightly thinner than the previous runs and shows a slightly lower threshold and a slightly higher Gunn frequency; in all respects they are quite similar to the previous results. The estimated contact resistance for the devices is about 8% of the bulk resistance. Gunn effect devices have also been made from solution-grown GaAs material. These devices show a positive temperature coefficient and thus require less power to operate. The noise level produced by these devices is lower than for the devices using boat-grown material especially at higher frequencies (approximately 100Kc). A circuit simulation for the Gunn device has been programmed for computer device-circuit interaction studies. This circuit model retains both the nonlinear and time-dependent characteristics of the device and has shown good correlation with several experimental results.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1967
Accession Number
AD0809420

Entities

People

  • M. L. Wright

Organizations

  • Hp

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Coefficients
  • Contracts
  • Electronic Components
  • Electronics
  • Frequency
  • Gunn Effect
  • Materials
  • Measurement
  • New Jersey
  • Oscillation
  • Resistance
  • Resonant Circuits
  • Resonant Frequency
  • Simulations
  • Spectra
  • Temperature Coefficients
  • Tuned Circuits

Readers

  • Electronics Engineering
  • Fluid Dynamics.
  • Semiconductor Device Technology