VANADIUM SILICIDE.

Abstract

These data sheets present a compilation of the electrical and electronic properties of vanadium-silicon compounds, especially V3Si. These properties include transition temperature, specific heat and Debye temperature, critical field, electrical resistivity, penetration depth and absorption. Other properties included are: superconductivity energy gap, magnetic hysteresis and susceptibility, critical current and current density, Hall coefficient and thermoelectric power. Three additional sections of this report cover the crystallographic and mechanical properties of V3Si as well as the nature of magnetic flux characteristics in the mixed state.

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1967
Accession Number
AD0810374

Entities

People

  • D. L. Grigsby

Organizations

  • Hughes Aircraft Company

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Coefficients
  • Contracts
  • Current Density
  • Elements
  • Energy Gaps
  • Hysteresis
  • Magnetic Flux
  • Mechanical Properties
  • Physical Properties
  • Silicon
  • Silicon Compounds
  • Specific Heat
  • Superconductivity
  • Transition Temperature
  • Vanadium

Fields of Study

  • Materials science

Readers

  • Business Analytics
  • Materials Science and Engineering.
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene