FAILURE MECHANISMS IN MOS TRANSISTORS.

Abstract

The main objectives of the study are to determine the basic failure mechanisms characteristic of silicon insulated gate field effect transistors (IGFET), identify the sources of failure, and develop techniques for reliability screening and stress testing of the finished devices. The device type selected for unit Group 1 study is a silicon p-channel-enhancement IGFET. Temperature storage has revealed no sensitive characteristics of the device at the 240-hour point. Step stress testing is exhibiting the failure mechanisms previously seen in the gate bias testing (I(DSS) and V(th) changes).

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1967
Accession Number
AD0810388

Entities

People

  • Harry Forehand
  • Lowell Clark

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Reliability
  • Semiconductor Devices
  • Transistors

Fields of Study

  • Engineering

Readers

  • Semiconductor Device Technology
  • Software Engineering
  • Structural Health Monitoring of Composite Structures.

Technology Areas

  • Microelectronics