SEMICONDUCTOR LASER ARRAY TECHNIQUES.
Abstract
This report contains information regarding the work done during the Second Quarter of the Semiconductor Laser Array Technique (SEMLAT) Program. The saturation characteristics of GaAs amplifying devices have been measured and analysed. The good agreement obtained between experiment and theory gives the appropriate background information for designing array amplification schemes. A multi-correlation program between material parameters, junction formation techniques and laser performance has shown Se-doped material to provide, thus far, the most homogeneous emission.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1967
- Accession Number
- AD0811711
Entities
Organizations
- General Electric