DEVELOPMENT OF A 1-WATT, 2-GHZ SILICON UHF POWER TRANSISTOR.
Abstract
The purpose of this effort is to design and develop a 1-watt, 2-gigahertz silicon transistor having a minimum efficiency of 50 percent and a power gain of 10 dB. Considerable effort was placed on mechanical and environmental testing of the modified type-A coaxial package. Some difficulty was experienced in developing a process for hermetically sealing the modified package. The problem areas have been determined, and new methods are under investigation. Evaluation of devices in the modified package was continued. Power output and collector efficiency as a function of drive level have been obtained. A sample of 32 devices was evaluated at 2 gigahertz, and the results were consistently good. Circuit analyses were conducted to determine optimum characteristic impedance and line length of input and output sections. Dynamic impedance has been registered at various power levels. An RF lifetest was performed on a sample device at 2 gigahertz. At 65 hours, no degradation of parameters was observed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1967
- Accession Number
- AD0812051
Entities
People
- E. T. Casterline
- H. C. Lee