TRANSISTOR, FIELD-EFFECT, HF, SILICON, POWER, LINEAR, 10-MEGAHERTZ, 5-WATT-PEP.
Abstract
The purpose of this effort is to develop a 5-watt linear MOS power transistor for single-sideband-amplifier applications. The transistor must operate at 10 megahertz from a 28-volt power supply with an efficiency of at least 35 percent and with less than -35 dB intermodulation distortion. Substantial effort has been directed toward development of a process for obtaining high drain-to-source breakdown voltage in MOS devices. Experimental masks were designed for a unit about one-fourth the size necessary to achieve the 5-watt output level. Units fabricated during this period verified the power level. Results indicate that a 50-volt breakdown is typical and that a 75-volt breakdown also is achievable with a 0.3-mil channel length. Obtaining the 75-volt level, however, is dependent upon careful control of the low-level diffusion profile at the drain edge.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1967
- Accession Number
- AD0812058
Entities
People
- M. M. Mitchell
- N. H. Ditrick