ELECTRON BEAM - PN JUNCTION ACTIVE DEVICES AND MEASUREMENTS.
Abstract
Chapter I discusses past work with electron beam - pn junction active devices and explain the motivations for the present study. Chapter II describes measurement of the average energy storage energy required for creation of an electron-hole pair in single-crystal silicon by low-energy electron bombardment storage energy is found to be independent of bombardment energy and equal to approximately 3.6 eV for bombardment energies from 1 to 12 KeV. Chapter III describes measurement of the drift velocities of carriers in silicon at high electric fields by a time-of-flight technique. Carrier velocities are determined absolutely by measuring the transit time of carriers through a region of approximately uniform electric field and known width in a P(+)-Nu-n(+) diode. Drift velocity data for carriers in silicon are presented for electric fields between 4 and 40 KV/cm and the present data are compared with those obtained from measurements of current density in bulk samples as a function of electric field. Chapter IV employs the results obtained in Chapters II and III to analyze the dynamic response of electron beam - pn junction active devices. The primary assumptions in this analysis are that (1) carriers are created near one edge of the depletion region of the beam diode; (2) carriers traverse the depletion region with constant drift velocity; and (3) the beam diode is connected to a resistive load impedance, such as a reflectionless transmission line. It is shown that there exist optimum depletion region widths that maximize system performance under conditions of sinusoidal steady state and transient excitation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1967
- Accession Number
- AD0812633
Entities
People
- Carroll B. Norris Jr.
- James F. Gibbons
Organizations
- Stanford University