THERMAL EFFECTS IN SEMICONDUCTOR REFLECTIVITY ENHANCEMENT.

Abstract

The time dependence of the enhanced reflectivity of semiconductors, produced and monitored by a pulsed argon ion laser, showed that the electron-hole plasma responsible for the enhanced reflectivity was thermally generated. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1967
Accession Number
AD0812792

Entities

People

  • Curtis L. Fincher
  • Milton Birnbaum
  • Tom L. Stocker

Organizations

  • The Aerospace Corporation

Tags

DTIC Thesaurus Topics

  • Argon Lasers
  • Compound Semiconductors
  • Electron Holes
  • Electronics
  • Electrons
  • Ion Lasers
  • Lasers
  • Reflectivity
  • Semiconductors
  • Solid State Electronics
  • Time Dependence

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Optical Physics and Photonics.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene