RELIABILITY STUDIES FOR ADVANCED INTEGRATED CIRCUITS.
Abstract
The introduction of advanced isolation techniques in the fabrication of integrated circuits has presented promising approaches for greatly improving the electrical performance and radiation resistance of integrated circuits. To achieve the reliability necessary for the application of this class of circuitry in military and space electronics, it is necessary to first understand those mechanisms which are introduced into the silicon monolithic integrated circuit by the dielectric isolation technique. This is the first phase of the two-part program aimed at establishing nondestructive screening and evaluating testing techniques for this class of circuitry. The emphasis in this work has been directed toward isolating those failure mechanisms which play a dominant role in determining the failure of dielectric isolated integrated circuits in those environments which are encountered in those systems which require high speed and high radiation resistance. From the results of this program it may be inferred that the dielectric isolation techniques used in the fabrication of the test vehicles herein described does not per se, introduce any new failure mechanisms of major significance into the system or will not, if proper controls on masking geometries and processes are employed, aggravate those mechanisms which are associated with junction isolated silicon monoithic integrated circuits. The mechanisms found to play an important role in causing failure of these circuits are inversion channeling across p-n junctions, metal migration at high current densities (greater than 10 to the 5th power per square cm), and mechanical anomalies in the metal film at discontinuities (steps) in the surface oxide film. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1967
- Accession Number
- AD0812905
Entities
People
- K. Robert Mackenzie
- Marvin R. Carpenter
Organizations
- Motorola Mobility