Microwave Oscillations in Bulk Semiconductors

Abstract

The drift velocity as a function of field for heat treated bulk GaAs has been measured by a technique of microwave heating. The results agree with those obtained by Gunn and Elliott using fast pulse techniques and differ significantly from that predicted by the transferred electron model. It has been found that the GaAs melt can leach impurities from the silica envelope surrounding the growth vessel as well as from the vessel itself. When an all Spectrosil system is employed, the heat treatable acceptor present in crystals grown in silica systems appears to be absent. Calculations and experiments showing the adverse effect of temperature rise on oscillators are given.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1967
Accession Number
AD0813109

Entities

People

  • C. Lanza
  • J. M. Woodall
  • N. Braslau

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bulk Semiconductors
  • Commerce
  • Crystal Growth
  • Crystals
  • Electric Fields
  • Electronics
  • Frequency
  • Gunn Effect
  • Heat Sinks
  • Heat Treatment
  • Heating
  • Materials
  • Microwaves
  • Oscillation
  • Semiconductors
  • Thermal Conductivity
  • Thickness

Fields of Study

  • Materials science

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Metallurgy
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics