MICROWAVE TRANSISTORS.
Abstract
This report describes advances in NPN planar-germanium transistor development for S and C band. Silicon nitride has been found to effectively mask both gallium and indium. Low-temperature sputtered films are being investigated. The Mo-Au contact system is now being used on the shallow-diffused germanium devices to reduce emitter base shorts resulting from use of aluminum expanded contacts. Detailed inductance measurements were made on the TI C-band and the miniature coaxial package. The double slide-screw transistor tester has been found to work very satisfactorily for noise and gain measurements up to 8 GHz. A new f sub t measuring set with operating frequency of 1 GHz has been constructed. A new method for noise characterization of microwave devices in terms of parameters invariant under lossless transformations has been developed. Breadboard work on the 1.7-2.4 GHz amplifier has been completed. Mask drawings for the S- and C-band oscillators and the S-band amplifier have been completed. Ceramic C-band balanced mixer NF performance shows 7.5 dB from 5.0 to 6.3 GHz. Characterization of the titanium dioxide substrate material has resulted in curves of Zo, loss, and slowing factor.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1967
- Accession Number
- AD0813343
Entities
People
- Clayton Teague
- David A Boone
- George Johnson
- Jerry Moore
- Julius Lange
Organizations
- Texas Instruments