TRANSISTOR, UHF, SILICON, POWER, LINEAR, 50-WATT, 500-MHZ WITH 10-DB POWER GAIN.

Abstract

The objective of this effort is to produce a transistor capable of delivering 50 watts of output power at 500 megahertz with 10-dB power gain and 50-percent efficiency. The objective will be achieved by using a metal-oxide-metal overlay structure employing integral leads. A proposed structure with the new device geometry is presented. Design characteristics are described. The advantages of employing metal-oxide-metal and integral lead technology are shown. Device development is detailed to illustrate the processing technology that has been performed on a small-area device employed as a test vehicle. A test metal-oxide-metal structure was fabricated, tested, and subjected to high-temperature testing. Results show that the silicon dioxide is an excellent dielectric for the formation of an MOM structure. The proposed package design is discussed and illustrated.

Document Details

Document Type
Technical Report
Publication Date
May 01, 1967
Accession Number
AD0814070

Entities

People

  • J. F. O'brien

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Dioxides
  • Efficiency
  • Gain
  • Geometry
  • High Temperature
  • Integrals
  • Metal Oxides
  • Oxides
  • Power Gain
  • Silicon
  • Silicon Dioxide
  • Test Vehicles
  • Transistors
  • Vehicles

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.