A STUDY OF FAILURE MECHANISMS IN SILICON PLANAR EPITAXIAL TRANSISTORS.
Abstract
This report covers the entire 18-month period in this study of the mechanisms that lead to failure in silicon n-p-n planar epitaxial transistors. The approach taken was the division of the investigation into specific interest areas, each associated with a part of the transistor structure. The areas included: Oxide and silicon dioxide interface; field induced junctions at the silicon surface; silicon (bulk); and metallization.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1967
- Accession Number
- AD0814810
Entities
People
- A. S. Grove
- D. J. Fitzgerald
- H. Sello
- I. A. Blech
- J. E. Lawrence