DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.

Abstract

Work began on development of a power FET using the buried-gate concept. During this quarter the work's main emphasis was on mask design and the development of a selective epitaxial process. Epitaxial lines, 12.7 micrometers wide, were selectively deposited with a minimum of extraneous epitaxial growth on the neighboring SiO2 mask. On a 5-ohms centimeters substrate the deposited films had average breakdown voltages of 100 volts, which reduced to 10-20 volts after epitaxial-source deposition. Devices fabricated using this process had triode characteristics because of the resulting channel shape. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 02, 1967
Accession Number
AD0814842

Entities

People

  • W. C. Bruncke

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Epitaxial Growth
  • Field Effect Transistors
  • Micrometers
  • Semiconductor Devices
  • Solid State Electronics
  • Substrates
  • Transistors

Fields of Study

  • Materials science

Readers

  • Computer Vision.
  • Semiconductor Device Technology