300 C SEMICONDUCTOR FOR POWER DEVICES.

Abstract

During the period covering this report, vapor-phase, epitaxial p-n junctions were grown in gallium arsenide, and the effects of several parameters, including temperature and substrate condition on the junction quality, were studied. Microplasmas still limit the breakdown of large-area diodes (0.100-inch diameter) but for diodes of smaller size (0.030-inch diameter) the breakdown is now limited only by material purity. Improved procedures for etching gallium-arsenide junctions were developed so that the breakdown determined by the material parameters can be measured with surface conditions having a minimum effect. The preservation of such stable surfaces over long periods was not achieved completely, however. Techniques for package mounting diodes, were partly developed, permitting some forward-bias measurements. In addition, some analysis of junction profiles through capacitance-voltage plate was made. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1967
Accession Number
AD0815000

Entities

People

  • L. Krassner
  • R. E. Enstrom

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Capacitance
  • Chemical Compounds
  • Compound Semiconductors
  • Coverings
  • Diameters
  • Electronics
  • Extrinsic Semiconductors
  • Gallium
  • Gallium Arsenides
  • Materials
  • Measurement
  • P-N Junctions
  • Phase
  • Semiconductors
  • Surface Properties
  • Vapor Phases

Readers

  • Materials Science
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene