GUNN EFFECT DEVICES
Abstract
Additional devices have been made using GaAs material produced by Hewlett-Packard Laboratories. One series of these new devices (TE 65) has produced a noise level approaching that of a klystron signal generator. Low- frequency, low-field equivalent circuits have been experimentally determined for both the boat-grown and solution-grown materials. A program to identify the noise mechanisms was begun and has eliminated the present pressure contacts as a noise source. The computer circuit simulation program was run for resonant circuit loading conditions. A 10 mw power output at 1% efficiency was predicted at 4.45 Gc for our present circuit configuration.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1967
- Accession Number
- AD0815480
Entities
People
- M. L. Wright
Organizations
- Hp