DEVELOPMENT OF A 1-WATT, 2GHZ SILICON UHF POWER TRANSISTOR.
Abstract
A new set of sequential single site diffusion photomasks was received and evaluated. The photomasks are suitable for fabricating devices, and diffusion runs have been started. Devices fabricated with a substantially different capacitance-versus-voltage curve were characterized at 2-gigahertz and exhibited improved performance. In the area of circuit evaluation and optimization, work has begun on a 2-gigahertz amplifier which will require no external tuning strips or bias tees. Power gain as a function of input drive was determined for typical 2-gigahertz devices. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1967
- Accession Number
- AD0815486
Entities
People
- E. T. Casterline
- H. C. Lee