SHORT-PULSED GAMMA-RADIATION EFFECTS ON DYNAMIC ELECTRONIC COMPONENTS
Abstract
A computer code has been developed for solving the nonlinear continuity equations and Poisson's equation which describe the response of electrons and holes in semiconductor devices to ionizing radiation. The ultimate goal of the research program was to incorporate the major second-order nonlinearities given by the output of the code (and observed by experiment) into simpler circuit models for active devices. The code is presently capable of obtaining solutions for two-region diodes and three-region transistors, which can be described by a one-dimensional geometry and discontinuous p-n junctions. Trivial changes in the program are described in detail for adapting the code to solutions for graded junctions and for the epitaxial four-region transistor (NPNN+ or PNPP+). Special features for representing avalanche effects, field- dependent modility, and a recombination lifetime dependent on displacement radiation damage are included. Experiments were performed to provide data for comparison with the computer description of real diodes and transistors. The computer data are also compared with the Ebers-Moll transistor model, which is typical of simpler device representations.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1967
- Accession Number
- AD0815529
Entities
People
- D. J. Burkhart
- D. K. Nichols
- J. H. Alexander
- P. R. Ward
- V. A. Van Lint
Organizations
- General Dynamics