DESIGN AND DEVELOPMENT OF INTEGRATED SEMICONDUCTOR CIRCUITS UTILIZING FIELD - EFFECT DEVICES.

Abstract

The purpose of this effort is to develop methods of controlling losses in a shift register and to improve the frequency response of a video amplifier. The use of amorphous silicon nitride-silicon dioxide as gate insulator is described. The properties of silicon nitride films are discussed. Stability MNOS diodes are discussed. Preliminary design details of MIS Shift Register circuit are discussed.

Document Details

Document Type
Technical Report
Publication Date
Mar 31, 1967
Accession Number
AD0815829

Entities

Organizations

  • Westinghouse Electric Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Ceramic Materials
  • Chemical Compounds
  • Circuits
  • Compound Semiconductors
  • Dielectrics
  • Dioxides
  • Electronics
  • Frequency
  • Frequency Response
  • Semiconductors
  • Shift Registers
  • Silicon
  • Silicon Compounds
  • Silicon Dioxide
  • Video Amplifiers

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics