TRANSISTOR, VHF, SILICON, POWER, LINEAR, 100-WATT PEP, 76-MHZ WITH 10-DB POWER GAIN.

Abstract

The design of high-frequency, high-power transistors for use in single side-band equipment is discussed and an empirical relation between base area and power gain is presented. Based on these data, a design for a 100-watt (PEP) at 76-megahertz transistor is given. This transistor design is an overlay construction having diffused ballast resistors in series with each emitter region. The fabrication of this device with integral leads and assembly in a high-frequency, high-power package is described. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1967
Accession Number
AD0815981

Entities

People

  • F. L. Katnack

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Assembly
  • Construction
  • Electronic Components
  • Electronic Equipment
  • Fabrication
  • Frequency
  • Gain
  • Integrals
  • Power Gain
  • Resistors
  • Transistors

Readers

  • Industrial Economics
  • Integrated Circuit Design and Technology.
  • Optical Physics and Photonics.