MICROWAVE TRANSISTORS.
Abstract
Planar double-diffused germanium transistors were fabricated using phosphorus-doped silicon diode as a mask. Base-collector time constants below 1.2 psec and frequencies above 7 GHz have been achieved consistently. The noise-figure objective of 5 dB at 3 GHz has been met within 0.5 dB. Gains of over 6.5 dB at 3 GHz have been achieved consistently. Silicon nitride masks and heavily doped base contact areas are being investigated. Improved versions of the TI C-band and miniature coaxial transistor packages were fabricated, and low VSWR test fixtures were built for both packages. An alternate method for measuring unilateral gain has been implemented. Final versions of the S- and C-band oscillators have been built on ceramic but not tested. One of the final S-band amplifiers has been completed and tested. Gain was 12 dB, noise figure 7 dB. The tunable filter for the S-band front end has been started with a theoretical study on coupled transmission lines. An image-terminated mixer in thin-film form showed a 3-dB improvement in noise figure over a broadband version. An S-band mixer on a high K substrate was constructed. Thin-film capacitors are being successfully used on several of the circuits. Work on packaging of the two receiver front ends has been started with a preliminary layout. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1967
- Accession Number
- AD0815982
Entities
People
- Andy Anderson
- Charlie Dennis
- David A Boone
- Harry Cooke
- Julius Lange
Organizations
- Texas Instruments