RESEARCH AND DEVELOPMENT OF LOCALIZED DEFECTS AND HOT SPOTS IN HIGH VOLTAGE PNPN INVERTER SWITCHES.

Abstract

The report deals with the research and development conducted during the investigation of localized defects and hot spots in high voltage p-n-p-n inverter switches. The effects of gallium and phosphorus layers upon the diffusion of gold in silicon are reported. In particular, the distribution of gold in Device 'D' is illustrated. In connection with the Device 'D' failure study, work was performed in relation to (1) the effects of the emitter short patterns, (2) the size and distribution of hot spots, (3) the device photoresponse in the vicinity of a hot spot, and (4) thermal transient measurements at a hot spot. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1967
Accession Number
AD0816300

Entities

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Diffusion
  • High Voltage
  • Hot Spots
  • Inverters
  • Measurement
  • Phosphorus
  • Voltage

Readers

  • Electrical Engineering
  • Metallurgy
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics