TRANSISTOR, VHF, SILICON, POWER (SPECIAL PURPOSE) 50 W, 76 MHZ.
Abstract
This report covers the significant accomplishments achieved during the 50 W, 76 MHz Program. Transistors capable of delivering 50 watts at 76 MHz with a collector-base breakdown voltage of greater than 100 volts at 10 mA have been successfully fabricated by using deep diffusions. Typical state-of-the-art devices are capable of delivering 50 watts at 76 MHz with 9.5 dB power gain and 79% collector efficiency with 25 volts power supply. In single sideband operation, they deliver 40 watts PEP with -30 dB 3rd harmonic intermodulation distortion and 11 dB of gain with 51% collector efficiency. The devices are capable of dissipating 80 W for over 1,000 hours under RF conditions. The mismatch load conditions which lead to device failure have been determined. Infrared microscope techniques have been used to measure the temperature of the emitters in each cell under operating conditions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1967
- Accession Number
- AD0816398
Entities
People
- R. J. Boncuk