REFLECTION AMPLIFICATION WITH ACTIVE TWO-PORTS.
Abstract
This report contains the results obtained from a study of reflection amplification with active two-ports. A design theory of the transistor reflection amplifiers based on the fundamental properties of active two-ports and broadband equlization of prescribed active loads is obtained. A number of UHF, L-band, and S-band transistor reflection amplifiers were fabricated and tested. Based on the study results the following conclusions can be stated: (1) Reflection amplification using active two-ports is feasible. (2) Adequate reflection gain and bandwidth can be obtained using the design theory derived here. (3) Stability and saturation characteristics of the transistor reflection amplifiers tested are superior to conventional reflection amplifiers using tunnel diodes. The results of this work indicate that the approach of reflection amplification using active two-ports merits further investigation, with particular emphasis placed on system applications where the high saturation power level of the reflection amplifier is essential. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1967
- Accession Number
- AD0818036
Entities
People
- Cheng Chao
- Jonny Anderson
- Peter Ver Planck
- Walter Ku
Organizations
- Sylvania Electric Products