FAILURE MECHANISMS IN SEMICONDUCTOR DIODES.
Abstract
This is the fourth Semi-Annual Report on a three-year contract for the investigation of long term failure mechanisms in semiconductor diodes. The report covers the last half of the second year's effort and is organized into nine sections and two appendices. The first five sections are related to the effort of structuring the degradation model, the sixth section covers the summary of the step-stress results, and the remaining sections contain a summation of the data obtained, as well as an analysis of the significance of the data. The first appendix is used to group all of the data for the high temperature and zero bias stresses, and the second appendix provides examples of some of the failure analyses which have been conducted. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1967
- Accession Number
- AD0818103
Entities
People
- Albert Fox
- Alfred Poe
- Byron L. Bair
- Erwin A. Herr
- John F. Schenck
Organizations
- General Electric