DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.

Abstract

The contract work program was expanded to include evaluation of both the MOSFET and junction FET as well as the buried-gate FET for high-power applications. A P-channel enhancement mode MOSFET was designed. Devices fabricated from these runs had a current capability greater than one amp, with 25-V breakdown voltages. A 27-MHz cutoff frequency was measured I sub D = -0.5 A. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1967
Accession Number
AD0818117

Entities

People

  • W. C. Bruncke

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Active Electronic Components
  • Contracts
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Field Effect Transistors
  • Frequency
  • Semiconductor Devices
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology