INVESTIGATION OF NEW CONCEPTS AND LINEAR BEAM TECHNIQUES FOR MICROWAVE GENERATION.
Abstract
Progress made on an investigation of active effects in bulk semiconductors and related physical electronics topics is discussed. In Gunn effect studies, peak powers of 75 watts at 7.1 GHz are reported from 30 mil samples. The switching effect is shown to be due to ionization by the peak field in the domains. Best LSA output is obtained when the microwave impedance is approximately twelve times the sample impedance. Measurements of quenched mode oscillating Gunn-diodes are discussed. Theoretical studies of low nl-product samples with a cathode drop are also discussed. IMPATT GaAs avalanche p-n junction diodes were constructed and tested. Large-signal silicon avalanche diode impedance characteristics are also discussed. Work on the InSb diode continued at X-band. A p-n junction in the InAs was also constructed but no microwave power was detected from this anode. Work continued on the microwave semiconductor materials program. The close-spaced water vapor transport method of growing GaAs was abandoned in favor of the arsenic trichloride method. Spark erosion equipment for the machining GaAs samples was developed. An ion implantation accelerator has been completed. An experiment to study high field mobility in GaAs was also designed and set up. The impurity profiles of GaAs was also designed and set up. The impurity profiles of GaAs diodes fabricated at Cornell were determined from measurements of junction capacitance. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1967
- Accession Number
- AD0818535
Entities
People
- G. C. Dalman
- L . A. Mackenzie
- L. F. Eastman
Organizations
- Cornell University College of Engineering