GUNN EFFECT DEVICES

Abstract

A comparison is made of the fabricated GaAs Gunn effect devices (TE65's). A slight improvement in power output has been achieved along with a considerable lowering of device FM noise. Along with microwave and noise measurements, preliminary results of a simplified computer study on the bulk negative resistance mode of operation is given.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1967
Accession Number
AD0818595

Entities

People

  • J. Barrera

Organizations

  • Hp

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Computers
  • Contracts
  • Efficiency
  • Electric Fields
  • Electronic Components
  • Electronics
  • Frequency
  • Government (Foreign)
  • Gunn Effect
  • Measurement
  • Modulation
  • New Jersey
  • Power
  • Radio Frequency Power
  • Resistance
  • United States

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thermal Physics or Thermal Science.