SINGLE CRYSTAL SILICON FILMS ON INSULATING SUBSTRATES (FOLLOW ON PROGRAM).
Abstract
The investigation establishing boundaries between regions of substrate orientations in which different silicon-sapphire relationships occur was brought to a conclusion. Additional relationships not previously reported have been found, viz..(111) Si // (1014) sapphire, (001) Si // (1012) sapphire, (310) Si // (1011) sapphire, and a group of multicrystalline relationships. A complete mapping of the orientation relationship modes by means of a stereographic projection has been carried out. Among the interesting results and conclusions is an explanation for the discrepancy between reported epitaxial silicon orientations deposited on the (1120) sapphire substrate plane. This substrate orientation is in close proximity to the boundaries between two modes of orientation relationships. The ion injection doping studies with silicon-on-sapphire have been extended to higher boron ion energies; junctions can now be formed at depths greater than a micron employing ion energies of 200 kev and above. Phosphorous ion beams in the energy range up to 500 kev have also now been produced in the accelerator. Silicon-on-sapphire samples masked to produce a variety of devices, including hybrid-process bipolar transistor structures by combined diffusion and ion injection techniques, are in process. Sequential ion injection with boron and sodium ions has produced three-layer planar structures both in bulk silicon and in silicon-on-sapphire. Multilayer masks have been used in some cases to produce planar transistor configurations. The improved surface-contact ion source has been completed and tested. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1967
- Accession Number
- AD0819275