STUDY OF TRANSIENT RADIATION EFFECTS ON MICROELECTRONICS.
Abstract
The purpose was to determine microcircuit vulnerability in a transient radiation environment. Microcircuits constructed by different fabrication techniques were experimentally evaluated in an ionizing and bulk displacement radiation environment to study the basic failure mechanisms. Test specimens were of three basic circuit types; gates, flip-flops, and amplifiers. Fabrication techniques represented were monolithic p-n junction isolation, monolithic oxide-isolation, multiple chip, thin-film compatible, and thin-film hybrid. Circuit failure thresholds were determined as a function of fan-out, ambient temperature requirements, and electrical parameter degradation. Experimental study consisted of measuring transient responses in pulsed ionizing radiation environments, and determining bulk displacement effects from exposure to a reactor neutron/gamma environment. Failure mechanisms were analytically related to the characteristics of the circuit design and fabrication technique. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1967
- Accession Number
- AD0819803
Entities
People
- Edward J. Steele
- James P. Raymond
- James R. Cross
- William W. Chang