STUDY OF CONTACT FAILURES IN INTEGRATED CIRCUITS.
Abstract
The program consisted of an investigation of the metallurgical reactions occurring at ohmic contact interfaces which would ultimately affect the reliability of semiconductor integrated circuits. The activation energies which determine the predominant reaction mechanisms and thus can be used to predict long-term reliability of the interfaces were evaluated. The material systems studied were those used in interconnections and terminations found in integrated circuits. Basically, the study consisted of observing resistivity changes in thin-film test samples aged at elevated temperatures, from which activation energies were determined. Also, phenomenological activation energies were compared with published values for diffusion in the systems studies. Concurrent complementary studies used optical micorscopy and electron diffraction to determine the metallurgical reactions occurring. The activation energies for those systems in which changes appeared were evaluated for use in long-term reliability prediction. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1967
- Accession Number
- AD0820554
Entities
People
- George L. Schnable
- Leroy R. Loewenstern
- Ralph S. Keen