RELIABILITY STUDIES FOR ADVANCED INTEGRATED CIRCUITS.
Abstract
The program objective was to determine the failure modes peculiar to the oxide isolation process or structure by fabricating oxide isolated amplifiers and utilizing them for the generation of failures on various step stress and constant stress life tests. The first replicate life tests were conducted on 250 amplifiers, and the results were used to redesign the vehicle for use in the second replicate of tests, for which an additional 250 amplifiers were fabricated. The harshest life test, in which the majority of failures were generated, proved to be 250 C storage. The three important failure modes generated are listed below in the order of their discovery. (1) A trench on the surface of the die at the dielectric isolation boundary between single- and polycrystalline silicon caused initial failures prior to life testing, due to open metal interconnections. (2) The high frequency gain peak could not be adjusted to the value as the low frequency gain by adjusting the external feedback capacitor, resulting in a reduction in bandwidth. (3) The formation of aluminum-gold intermetallics in the aluminum ground pad caused changes in nodal voltages greater than 10% and reduced the bandwidth on the test vehicles subjected to 250-degree storage. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1967
- Accession Number
- AD0820596
Entities
People
- D. E. Shaughnessy
- J. A. Hastings