SOME EFFECTS OF GAMMA RADIATION ON SILICON AND SILICON DEVICES.
Abstract
This work is based on the use of the Shockley-Read-Hall (SRH) defect theory to predict bulk radiation damage effects in semiconductor materials and devices, and, conversely, the use of radiation data from materials and devices to obtain information on the SRH defect parameters. The experimental work is limited to room-temperature cobalt-60 gamma irradiation of silicon devices and of boron- and phosphorus-doped crucible-grown silicon containing 2 - 8 x 10 to the 17th power oxygen atoms-cm to the minus 3 power; the theory is valid for any semiconductor in any radiation environment as is illustrated by examples utilizing data from the literature. A technique is developed for obtaining defect introduction rates and potentials from resistivity measurements made at a series of radiation fluences. In this technique, all irradiations and measurements are made at a single temperature, thus obviating certain difficulties associated with older techniques that require measurements over a range of temperatures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1967
- Accession Number
- AD0820612
Entities
People
- Dewitt Landis Jr
Organizations
- Stanford University