HIGH RESOLUTION STUDIES IN THE DECAY OF BA133 WITH SEMICONDUCTOR COUNTERS.
Abstract
A reinvestigation of some properties of the decay of Ba133 was carried out with high-resolution equipments based on lithium-drifted silicon-and germanium-semiconductor counters. Electromagnetic transitions of 383.7, 356.2, 302.8, 276.5, 223.1, 160.6, 80.9, 79.7, and 53.4 keV have been observed. The K-conversion coefficients and K/LM ratios for these transitions were determined either by electron-gamma and gamma-gamma coincidences or by comparison of the intensities of the electron-conversion and gamma-ray peaks. From these values, the multipolarities for the nine transitions were deduced. The electron-capture branching ratios to the four excited levels of Cs133 were derived and the corresponding log ft values are presented. A decay scheme with an unique spin-parity assignment is proposed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1967
- Accession Number
- AD0820615
Entities
People
- A. J. Haverfield
- E. Szichman
- H. E. Bosch
- S. M. Abecasis