RADIATION EFFECTS ON ELECTRONIC PARTS AND MATERIALS.
Abstract
Various organic, inorganic, crystalline, and amorphorous dielectric capacitors were irradiated at an Advanced Flash X-Ray (AFXR) machine. Results of these irradiations are presented in terms of a simple conductivity model. Tables of parameters are presented for use by the circuit designer requiring data on the perturbations to be expected as a result of a pulse of ionizing radiation. Temperature determinations of delta variations are described for tantalum-oxide capacitors over a temperature range from 0 to 100 C at exposure rates extending from approximately 10 to the 9th to 10 to the 11th rad/s. The charge dependence of a capacitor on the total radiation dose is included along with the noted capacitor limitations in a circumvention technique. The charge storage problem is discussed and a proposed space charge model for charge buildup is presented in this report. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1967
- Accession Number
- AD0821391
Entities
People
- D. C. Sullivan
- Frank A. Frankovsky
- P. B. Flagg
Organizations
- International Business Machines Corporation (Armonk, NY)