STUDY OF NOISE IN SEMICONDUCTOR DEVICES.
Abstract
In part I it is shown theoretically that the noise figure of FET mixers can be reduced by h. f. feedback from output to input. In the limit of stability the spot noise figure equals that of the corresponding h. f. amplifier. These theoretical results are verified by experiment, and good agreement between theory and experiment is noted. In part II THE NOISE IN GaAs lasers is death with. It is shown that the only significant noise source is shot noise of the detected photocurrent. The measurements were not accurate enough to detect the very small amount of spontaneous emission noise present near threshold. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1967
- Accession Number
- AD0821497
Entities
People
- A. Van Der Ziel
Organizations
- University of Minnesota