STUDY OF NOISE IN SEMICONDUCTOR DEVICES.
Abstract
Part I discusses noise in p-i-n junction diodes in which the i-region is so short that the characteristic varies as (exp(eV/beta kT)-1) with beta is similarly ordered to 1 at low voltages and with beta slowly decreasing at higher voltages. It is shown that the noise can be represented as 1 sq = 2eI delta f + 4 beta kT(g-g sub o) delta f. Here the first term represents shot noise and the second term thermal noise of the incremental conductance (g-g sub o). Part II discusses noise in p-n-p-n diodes. The noise is 1/f noise and is quite large. There are two enhancement processes at work: (1) The internal feedback in the device gives already an enhancement of the noise emf for open input. (2) Because of the very small internal resistance R sub in of the device, the short-circuit noise current is very large. There is a sharp peak in the noise current where R sub in goes through zero. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1967
- Accession Number
- AD0821498
Entities
People
- A. Van Der Ziel
Organizations
- University of Minnesota