THEORY OF OPERATION OF FIELD-EFFECT TRANSISTORS BEYOND PINCH-OFF.
Abstract
A device oriented model is developed to describe the operation of the junction-gate field-effect transistor (FET) beyond pinch-off. The model is valid over the entire dynamic range of device operation and provides a qualitative and quantative description of the current conduction mechanism in pinched operation. The current flow through the FET is analyzed by treating the channel as made up of two separate regions. In Region I near the source, the gradual-channel model is utilized. In Region II near the drain, velocity-limited current flow is assumed and the potential distribution is described in terms of the two-dimensional Poisson's equation. The most significant result of the device model is the finite drain resistance in pinched operation, which shows a strong dependence on the device operating point. It is shown that the drain 'current-resistance product', is insensitive to temperature, and can be accurately predicted at any operating point from the material and the geometrical properties of the device. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 28, 1967
- Accession Number
- AD0821679
Entities
People
- A. B. Grebene
- S. K. Ghandhi
Organizations
- Rensselaer Polytechnic Institute