GENERATION, TRANSPORT AND PHOTOEMISSION PROCESSES IN MOLECULAR CRYSTALS.
Abstract
Transient photocurrent measurements are employed to study carrier generation and transport processes in iodine and sulphur. The spectral quantum yield for photogeneration of holes in iodine exhibits two peaks: one at 0.45 microns and amounting to 7 percent, the other at about 0.3 microns and amounting to 17 percent. A detailed study of the effect of doping and crystal-growth conditions on transport in sulphur reveals that the hole drift mobility can be controlled over wide limits whereas the electron drift mobility is insensitive to variations in growth conditions and doping. Photoemission of holes and electrons from a metal contact into anthracene has been observed and studied. Useful criteria for distinguishing between such photoemission and spurious effects originating from bulk and surface photoconductivity have been obtained. In the case of holes, the measurement provides a direct means of determining the spectral distribution of the absolute quantum yield of the photoemission process. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1967
- Accession Number
- AD0822571
Entities
People
- A. Many
- I. Teucher
- J. Levinson
Organizations
- Hebrew University of Jerusalem