GUNN EFFECT DEVICES

Abstract

A shift from emphasis on device technology to device parameter variation and performance has been made. To date, over 60 MW of CW power has been obtained at 3.5 GHz but with poorer noise behavior than has been reported for lower power devices. Over 1000 hours of CW operation have been achieved for a few TE 144 samples with no measurable deterioration of D. C. or RF behavior. Considerable effort has been made to correlate known material doping gradients to poor RF behavior and lack of current drop at threshold. Two simple FM noise measurement systems are described and further computer results for LSA mode operation are presented.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1967
Accession Number
AD0822944

Entities

People

  • J. Berrera

Organizations

  • Hp

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Computers
  • Contracts
  • Conversion
  • Efficiency
  • Electronic Components
  • Electronics
  • Fabrication
  • Frequency
  • Gunn Effect
  • Materials
  • Measurement
  • Microwaves
  • New Jersey
  • Oscillators
  • Spectra
  • Test And Evaluation
  • United States

Readers

  • Electronics Engineering
  • Mathematics or Statistics
  • Organizational Psychology.