MICROWAVE TRANSISTORS.

Abstract

Planar double-diffused transistors were fabricated using phosphorus-doped silicon dioxide as a mask. Some of the better devices exhibited the following microwave performance: unilateral gains of 10.0 dB at 3 GHz and 5.4 dB at 6 GHz; maximum available gains of 6.5 - 7.0 dB at 3 GHz and 2.0 - 2.2 dB at 6 GHz; noise figures of 6.6 - 7.4 dB at 3 GHz and 8.5 - 11.6 dB at 6 GHz. Epitaxial growth techniques, silicon nitride masks, and heavily doped base contact areas were investigated. Improved microwave transistor packages were developed. A microwave measurements study program was undertaken. S-band and C-band receiver front ends were completed and delivered. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1967
Accession Number
AD0823120

Entities

People

  • Andy Anderson
  • Charlie Dennis
  • David A Boone
  • Harry Cooke
  • Julius Lange

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • C Band
  • Ceramic Materials
  • Dioxides
  • Elements
  • Epitaxial Growth
  • Measurement
  • Microwaves
  • Phosphorus
  • Silicon
  • Silicon Dioxide
  • Transistors

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Semiconductor Device Technology